{"id":18434,"date":"2021-07-29T12:53:50","date_gmt":"2021-07-29T05:53:50","guid":{"rendered":"https:\/\/www.nectec.or.th\/en\/?p=18434"},"modified":"2021-08-26T10:30:08","modified_gmt":"2021-08-26T03:30:08","slug":"patent_us20090026065","status":"publish","type":"post","link":"https:\/\/www.nectec.or.th\/en\/scientific-excellence\/patents\/patent_us20090026065.html","title":{"rendered":"Gas-timing method for depositing oxynitride films by reactive R.F. magnetron sputtering"},"content":{"rendered":"\t\t<div data-elementor-type=\"wp-post\" data-elementor-id=\"18434\" class=\"elementor elementor-18434\" data-elementor-post-type=\"post\">\n\t\t\t\t\t\t<section class=\"elementor-section elementor-top-section elementor-element elementor-element-3660389 elementor-section-full_width elementor-section-height-min-height elementor-section-height-default elementor-section-items-middle\" data-id=\"3660389\" data-element_type=\"section\" data-e-type=\"section\" 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class=\"row\"><div id=\"content\" class=\"content-area col-sm-9\"><article><header><h2>Gas-timing method for depositing oxynitride films by reactive R.F. magnetron sputtering<\/h2><\/header><\/article><\/div><\/div><\/div><\/div>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-0750372 elementor-shape-square e-grid-align-left elementor-grid-0 elementor-widget elementor-widget-social-icons\" data-id=\"0750372\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"social-icons.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t<div class=\"elementor-social-icons-wrapper elementor-grid\" role=\"list\">\n\t\t\t\t\t\t\t<span class=\"elementor-grid-item\" role=\"listitem\">\n\t\t\t\t\t<a class=\"elementor-icon elementor-social-icon elementor-social-icon-facebook elementor-animation-grow elementor-repeater-item-0645723\" target=\"_blank\">\n\t\t\t\t\t\t<span 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4.548.325 9.097.325 13.645 0 138.72-105.583 298.558-298.558 298.558-59.452 0-114.68-17.219-161.137-47.106 8.447.974 16.568 1.299 25.34 1.299 49.055 0 94.213-16.568 130.274-44.832-46.132-.975-84.792-31.188-98.112-72.772 6.498.974 12.995 1.624 19.818 1.624 9.421 0 18.843-1.3 27.614-3.573-48.081-9.747-84.143-51.98-84.143-102.985v-1.299c13.969 7.797 30.214 12.67 47.431 13.319-28.264-18.843-46.781-51.005-46.781-87.391 0-19.492 5.197-37.36 14.294-52.954 51.655 63.675 129.3 105.258 216.365 109.807-1.624-7.797-2.599-15.918-2.599-24.04 0-57.828 46.782-104.934 104.934-104.934 30.213 0 57.502 12.67 76.67 33.137 23.715-4.548 46.456-13.32 66.599-25.34-7.798 24.366-24.366 44.833-46.132 57.827 21.117-2.273 41.584-8.122 60.426-16.243-14.292 20.791-32.161 39.308-52.628 54.253z\"><\/path><\/svg>\t\t\t\t\t<\/a>\n\t\t\t\t<\/span>\n\t\t\t\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t<div class=\"elementor-element elementor-element-aca2360 elementor-widget elementor-widget-text-editor\" data-id=\"aca2360\" data-element_type=\"widget\" data-e-type=\"widget\" data-widget_type=\"text-editor.default\">\n\t\t\t\t<div class=\"elementor-widget-container\">\n\t\t\t\t\t\t\t\t\t<header><\/header><section><h3>Product: Gas-timing method for depositing oxynitride films by reactive R.F. magnetron sputtering<\/h3><figure><figcaption style=\"padding-left: 440px;\"><a href=\"https:\/\/www.nectec.or.th\/en\/wp-content\/uploads\/2021\/07\/4_US8372250.pdf\" target=\"_blank\" rel=\"noopener\">Downlond<\/a><\/figcaption><\/figure><ul><li>National patents: US<\/li><li>Publication number: US20090026065 A1<\/li><li>Application number: US 11\/878,270<\/li><li>Publication date: Jan.29, 2009<\/li><li>Filing date: Sep. 23, 2007<\/li><li>Patent number: US8372250 B2<\/li><li>Date of Patent: Jan. 29, 2009<\/li><li>Inventors: Jiti Nukeaw, Bangkok, Supanit Porntheeraphat, Apichart Sungthong<\/li><li>Original Assigne: National Science And Technology Development Agency<\/li><li>Status: Patented<\/li><\/ul><h3>ABSTRACT:<\/h3><p>A gas-timing control method for depositing metal oxynitride and transition metal oxynitride (Mx(ON)y) films on glass and flexible substrates using reactive radio frequency magnetron sputtering, without substrate heating. A system includes a sputtering chamber, substrates, targets, three mass flow controllers controlled respective flow rates of argon, nitrogen and oxygen gases alternately and intermittently into the sputtering chamber, and a radio frequency generator with 13.56 MHz which irradiated in the sputtering chamber to decompose sputtering gases. The flow rate ratio of oxygen+nitrogen\/argon is at least 0.02, the flow rate ratio of oxygen\/nitrogen is at least 0.01, and the sequence timing of argon, nitrogen and oxygen gases alternately or mixed into the sputtering chamber at least 1 sec.<\/p><\/section><footer><div class=\"tags\">\u00a0<\/div><p class=\"pull-right\" style=\"padding-left: 680px;\">June-30-2016 08:55<\/p><\/footer>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<\/div>\n\t\t","protected":false},"excerpt":{"rendered":"<p>Publication number: US20090026065 A1<\/p>\n","protected":false},"author":1,"featured_media":20860,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[246],"tags":[416,418,415,419,280,417,422,421,420],"class_list":["post-18434","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-patents","tag-depositing","tag-films","tag-gas-timing","tag-magnetron","tag-nectec","tag-oxynitride","tag-patents","tag-research","tag-sputtering"],"_links":{"self":[{"href":"https:\/\/www.nectec.or.th\/en\/wp-json\/wp\/v2\/posts\/18434","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.nectec.or.th\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.nectec.or.th\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.nectec.or.th\/en\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.nectec.or.th\/en\/wp-json\/wp\/v2\/comments?post=18434"}],"version-history":[{"count":0,"href":"https:\/\/www.nectec.or.th\/en\/wp-json\/wp\/v2\/posts\/18434\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.nectec.or.th\/en\/wp-json\/wp\/v2\/media\/20860"}],"wp:attachment":[{"href":"https:\/\/www.nectec.or.th\/en\/wp-json\/wp\/v2\/media?parent=18434"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.nectec.or.th\/en\/wp-json\/wp\/v2\/categories?post=18434"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.nectec.or.th\/en\/wp-json\/wp\/v2\/tags?post=18434"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}